Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect

被引：52

作者：

Maeda, N ^{[1
]}

Saitoh, T ^{[1
]}

Tsubaki, K ^{[1
]}

Nishida, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Phys Sci Lab, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7B期

关键词：

AlGaN/InGaN/AlGaN double-heterostructure; AIGaN/GaN/AlGaN double-heterostructure; field effect transistor; two-dimensional electron gas; piezoelectric effect; MOVPE;

D O I：

10.1143/JJAP.38.L799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A striking effect of piezoelectric electron confinement on transport properties has been observed for the first time in nitride double-heterostructures. The two-dimensional electron gas mobility has shown to be drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement results from the piezoelectrically enhanced electron confinement in the double-heterostructure. The electron transport properties in the AlGaN/InGaN/AlGaN double-heterostructure have also been examined for the first time. The increased capacity for the two-dimensional electron gas density has been observed in addition to the enhanced electron mobility. The AlGaN/(In)GaN/AlGaN double-heterostructures are promising for field effect transistor applications because of their superior electron transport properties.

引用

页码：L799 / L801

页数：3

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