DC to 40 QHz on-wafer, package for RF MEMS switches

A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.4 dB up to 40 GHz (including a 2700 mum long through line) and a return loss below -25 dB up to 40 GHz. Its fabrication process is designed so as to be completely compatible with the MEMS switch process, hence allowing the parallel fabrication of all the components on one wafer. The on-wafer proposed packaging approach requires no external wiring to achieve signal propagation and thus it has the potential for lower loss and better performance at higher frequencies.