Role of the deposition parameters in the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique

被引:7
作者
Martins, R [1 ]
Macarico, A [1 ]
Ferreira, I [1 ]
Fidalgo, J [1 ]
Fortunato, E [1 ]
机构
[1] INST DEV NEW TECHNOL,CTR EXCELLENCE MICROELECT & OPTOELECT PROC,P-2825 MONTE DE CAPARICA,PORTUGAL
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1997年 / 76卷 / 03期
关键词
D O I
10.1080/01418639708241091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The objective of this work is to present an analytical model able to interpret the experimental dependence of the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique on the deposition parameters (discharge pressure, gas Bow temperature and rf power density). The model proposed is based on the Navier-Stokes equations applied to a gas flow considered to be quasi-incompressible and quasi-inviscous, whenever the Mach number is below 0.3. This condition leads to the establishment of the proper quasisteady-state gas Bow equations, and the corresponding equations of energy and momentum balance ascribed to the mass profile of the species formed, under the presence of a low-rf-power plasma density, are able to predict the uniformity distribution of the film over the entire deposited substrate area.
引用
收藏
页码:259 / 272
页数:14
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