Photodissociation of HBr adsorbed on the surface and embedded in large Arn clusters

被引:49
作者
Baumfalk, R
Nahler, NH
Buck, U
Niv, MY
Gerber, RB
机构
[1] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
[2] Hebrew Univ Jerusalem, Fritz Haber Inst Mol Dynam, IL-91904 Jerusalem, Israel
[3] Univ Calif Irvine, Irvine, CA 92697 USA
关键词
D O I
10.1063/1.481798
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultraviolet (UV) photodissociation experiments are carried out for Ar-n(HBr) clusters in which the HBr is adsorbed on the surface of the Ar-n, and also on isomers of these systems in which HBr is embedded within the rare-gas cluster. The mean size of the cluster distribution in the experiments is around (n) over bar=130. The kinetic energy distribution (KED) of the hydrogen atoms that left the clusters is measured. Molecular dynamics (MD) simulations of the photodissociation of the chemically similar clusters Ar-n(HCl) are used to provide a qualitative interpretation of the experimental results. The clusters with embedded HBr give a very cold H-atom KED. The clusters with the surface-adsorbed HBr give a KED with two peaks, one corresponding to very low energy H atoms and the other pertaining to high energies, of the order of 1.35 eV. The theoretical simulations show that already for n=54, there is a strong cage effect for the "embedded" molecule case, resulting in slow H atoms. The surface-adsorbed case is interpreted as due to two types of possible adsorption sites of HX on Ar-55: for a locally smooth adsorption site, the cage effect is relatively weak, and hot H atoms emerge. Sites where the HBr is adsorbed at a vacancy of Ar-n lead to "encapsulation" of the H atom produced, with a strong cage effect. A weak tail of H atoms with energies well above the HBr monomer excess energy is observed for the embedded case. Simulations support that this is due to a second photon absorption by recombined, but still vibrationally hot, HBr. The results throw light on the differences between the cage effect inside bulk structure and at surfaces. (C) 2000 American Institute of Physics. [S0021-9606(00)00925-9].
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页码:329 / 338
页数:10
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