Electrical and optical properties of carbon implanted In2O3 thin film

被引：8

作者：

Hanamoto, K

Sasaki, M

Yoneda, T

Miyatani, K

Miki, H

Kaito, C

Nakayama, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Phys, Shiga 5258577, Japan

[2] Ind Res Ctr SHIGA Prefecture, Otsu, Shiga 5203004, Japan

[3] Ion Engn Res Inst Corp, Osaka 5730128, Japan

[4] Ritsumeikan Univ, Dept Elect & Elect Engn, Shiga 5258577, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 168卷 / 03期

关键词：

In2O3; carbon ion implantation; electrical resistivity; optical transmittance;

D O I：

10.1016/S0168-583X(99)01201-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical and optical properties of In2O3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 x 10(15) to 2 x 10(16) cm(-2). After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350 degrees C, the electrical resistivity achieved for a sample with an ion dose of 5 x 10(15) cm(-2) was 5.4 x 10(-4) Ohm cm with an optical transmittance of 82% at a wavelength of 550 nm. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：389 / 394

页数：6

共 11 条

[1] UNTERSUCHUNGEN AN HALBLEITENDEN INDIUMOXYDSCHICHTEN [J].