Localized f electrons in CexLa1-xRhIn5:: de Haas-van Alphen measurements -: art. no. 180402

被引：41

作者：

Alver, U ^{[1
]}

Goodrich, RG

Harrison, N

Hall, DW

Palm, EC

Murphy, TP

Tozer, SW

Pagliuso, PG

Moreno, NO

Sarrao, JL

Fisk, Z

机构：

[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA

[2] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.64.180402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of the de Haas-van Alphen effect in CexLa1-xRhIn5 reveal that the Ce 4f electrons remain localized for all x, with the mass enhancement and progressive loss of one spin from the de Haas-van Alphen signal resulting from spin fluctuation effects. This behavior may be typical of antiferromagnetic heavy fermion compounds, in spite of the fact that the 4f electron localization in CeRhIn5 is driven, in part, by a spin-density wave instability.

引用

页数：4

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