共 36 条
Electromodulated doping of the hole transport layer in a small molecule organic light-emitting diode
被引:10
作者:
Lane, Paul A.
[1
]
Chen, Song
[2
]
So, Franky
[2
]
机构:
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Florida, Dept Mat Sci & Engn, Athens, AL 35611 USA
来源:
JOURNAL OF PHOTONICS FOR ENERGY
|
2011年
/
1卷
关键词:
organic electroluminescence;
organic light-emitting diode;
electroabsorption;
spectroscopy;
doping;
ELECTRIC-FIELD DISTRIBUTION;
ELECTROABSORPTION SPECTROSCOPY;
ELECTROLUMINESCENT DEVICES;
BUFFER LAYER;
POLYMER;
INJECTION;
PERFORMANCE;
INSERTION;
ALUMINUM;
BARRIERS;
D O I:
10.1117/1.3569109
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Electromodulation spectroscopy has been used to probe the effect of a polymer hole injection layer on electric fields and charge injection in vacuum-deposited organic light-emitting diodes. The electromodulation spectrum consists of electroabsorption of the transport layers and excited state absorption of trapped cations in the hole transport layer. Field-dependent modulation of trapped charge at the interface between the injection and transport layers substantially modifies the electric field distribution within the device. In reverse bias, the electric field strength is suppressed within the hole transport layer and concentrated in the electron transport layer. In forward bias, field-dependent doping of the hole transport layer dominates the electromodulation spectrum. The field-dependent trap density is calculated to be of order 10(13) cm(-2), equivalent to mu C/cm(2) charge density. The built-in potential is estimated to be between 2.2 and 2.5 V, consistent with low carrier injection barriers. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3569109]
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页数:12
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