Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

被引：1094

作者：

Chen, Haichao ^{[1
]}

Jiang, Jianjun ^{[1
]}

Zhang, Li ^{[1
]}

Wan, Houzhao ^{[1
]}

Qi, Tong ^{[1
]}

Xia, Dandan ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

NANOSCALE | 2013年 / 5卷 / 19期

关键词：

ELECTRODES; NANOSHEETS; GROWTH;

D O I：

10.1039/c3nr02958a

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

A 3D highly conductive urchin-like NiCo2S4 nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo2S4 electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

引用

页码：8879 / 8883

页数：5

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