ion implantation;
control of interface structure and morphology;
electroluminescence;
organic semiconductors based on conjugated molecules;
light sources;
D O I:
10.1016/S0379-6779(98)00950-3
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We present results about the realization of organic light-emitting diodes by "inert" ion beam assisted deposition. The used ions are Helium and Argon and the organic material is 8-tris-hydroxyquinoline aluminium which emit green light. There is no influence on the measured electroluminescence spectra but we observe notable modifications on the dark current, luminance and internal quantum efficiency versus applied bias characteristics. We discuss the different results.