Role of defect sites and Ga polarization in the magnetism of Mn-doped GaN

被引：52

作者：

Keavney, DJ ^{[1
]}

Cheung, SH

King, ST

Weinert, M

Li, L

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[2] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.95.257201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a study of the Mn local structure, magnetism, and Ga moments in molecular beam epitaxy grown Mn-doped GaN films. Using x-ray absorption spectroscopy and magnetic circular dichroism, we find two distinct Mn sites and a Ga moment antiparallel to Mn. First-principles calculations reproduce this phenomenology and indicate that Mn preferentially populates Ga sites neighboring N split interstitial defects. These results show that defects may strongly affect the Mn ordering and magnetism, and that the GaN valence band is polarized, providing a long-range ferromagnetic ordering mechanism for Ga1-xMnxN.

引用

页数：4

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