Structural and spectroscopic investigations of CdS/HgS/CdS quantum-dot quantum wells

被引：271

作者：

Mews, A ^{[1
]}

Kadavanich, AV ^{[1
]}

Banin, U ^{[1
]}

Alivisatos, AP ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB,DIV MAT SCI, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.53.R13242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth in a CdS/HgS heterostructure of nanometer dimensions, prepared by methods of wet chemistry, is demonstrated. High-resolution transmission-electron microscopy is used to determine the shape and crystallinity of this system consisting of a quantum well in a quantum dot. The homogeneous absorption and fluorescence spectra are investigated by transient hole burning and fluorescence line-narrowing spectroscopy. The photophysical measurements provide evidence for charge-carrier localization within the HgS well.

引用

页码：13242 / 13245

页数：4

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