In-situ observation of CuInSe2 formation process using high-temperature X-ray diffraction analysis

被引：10

作者：

Katsui, A

Iwata, T

机构：

[1] Tokai Univ, Dept Mat Sci & Technol, Sch & High Technol Human Welf, Shizuoka 4100321, Japan

[2] NTT Corp, NTT Access Network Syst Labs, Tokai, Ibaraki 3191106, Japan

来源：

THIN SOLID FILMS | 1999年 / 347卷 / 1-2期

关键词：

reaction kinetics; semiconductors; solar cells; X-ray diffraction;

D O I：

10.1016/S0040-6090(98)01747-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reaction mechanism leading to the formation of CuInSe(2) thin films has been investigated by means of high-temperature X-ray diffraction analysis. The Cu-rich Cu-In-Se stacked elemental layers are isothermally heated at a fixed temperature between 100 and 200 degrees C, and the time progressive reaction process is evaluated from changes in the X-ray diffraction pattern during heating. The results show that CuInSe(2) is formed by the reaction of Cu(2)Se, and Cu(2-x)Se to a lesser extent, with In(2)Se and elemental Se at heating temperatures higher than the melting point of In. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：151 / 154

页数：4

共 17 条

[1] SOLID-LIQUID REACTION-MECHANISMS IN THE FORMATION OF HIGH-QUALITY CUINSE2 BY THE STACKED ELEMENTAL LAYER (SEL) TECHNIQUE [J].