Metal-semiconductor transition of La2NiO4+delta

被引：29

作者：

Ishikawa, K

Shibata, W

Watanabe, K

Isonaga, T

Hashimoto, M

Suzuki, Y

机构：

[1] Department of Industrial Chemistry, Meiji University, Kawasaki, 214, Higashi-mita, Tama-ku

[2] Faculty of Engineering, Meiji University, Kawasaki, 214, Higashi-mita, Tama-ku

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1997年 / 131卷 / 02期

关键词：

D O I：

10.1006/jssc.1997.7375

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The excess oxygen concentrations of La2NiO4+delta have been measured in 0.00-6.06, 13.33-18.25, or 66.66-71.40 kPa of oxygen in the range 300-1273 K by the desorption method, The electrical conductivities of La2NiO4+delta have been also measured in 1.33, 13.33, 66.66, or 101.33 kPa of oxygen in the range 77.4-1273 K or under a helium atmosphere (1 atm) in the range 77.4-300 K. The mechanism of the metal-semiconductor transition of La2NiO4+delta is discussed on the basis of the excess oxygen concentration and the electrical conductivity data. The metal-semiconductor transition of La2NiO4+delta is explained by the carrier concentration and the activation energy changes associated with the incorporation of excess oxygen. (C) 1997 Academic Press.

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页码：275 / 281

页数：7

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