Modelling of spin-polarized electron tunnelling from 3d ferromagnets

被引:127
作者
Tsymbal, EY
Pettifor, DG
机构
[1] Department of Materials, University of Oxford, Oxford OX1 3PH, Parks Road
关键词
D O I
10.1088/0953-8984/9/30/002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Spin-polarized electron tunnelling from ferromagnetic Fe and Co Alms is modelled within a quantum-mechanical treatment of the electronic transport and a tight-binding approximation accounting for an accurate band structure of the 3d metals. Calculations have been performed assuming that the band gap of the insulator is much larger than the hopping integrals between the metal and the insulator, the electronic structure of the latter being approximated by two non-coupled s-type tight-binding bands separated by a gap. It is found that within the ballistic regime of conductance the spin polarization of the tunnelling current depends strongly on the type of covalent bonding between the ferromagnet and the insulator. In the case of ssa bonding the tunnelling current is carried only by the s electrons of the ferromagnet and the spin polarization is positive. This is due to the strong s-d hybridization within the ferromagnet which reverses the sign of the spin polarization of the s-electron partial density of states at the Fermi level with respect to the total surface density of states. The absolute values of the spin polarization of the tunnelling current in this case of ss sigma bonding across the metal-insulator interface are in very good agreement with experimental data on tunnelling between 3d ferromagnets and aluminium through an alumina spacer. Including the sd sigma bonding at the interface, however, results in a large contribution of the d-electron tunnelling current, which reduces the spin polarization and leads to a change in its sign for the case of Co.
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收藏
页码:L411 / L417
页数:7
相关论文
共 18 条
[1]   PARALLEL AND PERPENDICULAR TRANSPORT IN MULTILAYERED STRUCTURES [J].
ASANO, Y ;
OGURI, A ;
MAEKAWA, S .
PHYSICAL REVIEW B, 1993, 48 (09) :6192-6198
[2]   DIRECT CALCULATION OF TUNNELING CURRENT [J].
CAROLI, C ;
COMBESCO.R ;
NOZIERES, P ;
SAINTJAM.D .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (08) :916-&
[3]   The theory of metal-ceramic interfaces [J].
Finnis, MW .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (32) :5811-5836
[4]   SPIN-DEPENDENT TUNNELLING FROM TRANSITION-METAL FERROMAGNETS [J].
HERTZ, JA ;
AOI, K .
PHYSICAL REVIEW B, 1973, 8 (07) :3252-3256
[5]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[6]   ANDERSON LOCALIZATION IN 2 DIMENSIONS [J].
LEE, PA ;
FISHER, DS .
PHYSICAL REVIEW LETTERS, 1981, 47 (12) :882-885
[7]   Large enhancement of the perpendicular giant magnetoresistance in pseudorandom magnetic multilayers [J].
Mathon, J .
PHYSICAL REVIEW B, 1996, 54 (01) :55-58
[8]   SPIN-POLARIZED ELECTRON-TUNNELING [J].
MESERVEY, R ;
TEDROW, PM .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1994, 238 (04) :173-243
[9]  
MIYAZAKI T, 1995, J MAGN MAGN MATER, V139, pL231, DOI 10.1016/0304-8853(94)01648-8
[10]   LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].
MOODERA, JS ;
KINDER, LR ;
WONG, TM ;
MESERVEY, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276