Structure of chemically derived mono- and few-atomic-layer boron nitride sheets

被引:495
作者
Han, Wei-Qiang [1 ]
Wu, Lijun [2 ]
Zhu, Yimei [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
机构
[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
boron compounds; crystal microstructure; electron energy loss spectra; III-V semiconductors; monolayers; sheet materials; transmission electron microscopy; wide band gap semiconductors;
D O I
10.1063/1.3041639
中图分类号
O59 [应用物理学];
学科分类号
摘要
We prepared mono- and few-layer hexagonal boron nitride sheets by a chemical-solution-derived method starting from single-crystalline hexagonal boron nitride. Using high-resolution transmission electron microscopy and electron-energy-loss spectrometry, we characterized the microstructure, composition, and near-edge fine structure of the boron nitride sheets. We conclude that the fringe contrast in the edge and the moire patterns are feasible criteria for determining the number of layers and their stacking orientation in the sheets. These criteria are also useful for other mono- and few-layer materials, such as graphene sheets.
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页数:3
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