Electrcal properties of cyano-substituted oligothiophenes towards n-type organic semiconductors

被引：10

作者：

Demanze, F ^{[1
]}

Yassar, A ^{[1
]}

Fichou, D ^{[1
]}

机构：

[1] CNRS, Mat Mol Lab, UPR 241, F-94320 Thiais, France

来源：

SYNTHETIC METALS | 1999年 / 101卷 / 1-3期

关键词：

D O I：

10.1016/S0379-6779(98)01340-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

引用

页码：620 / 621

页数：2

共 6 条

[1] Oligothiophenes end-capped by nitriles. Preparation and crystal structures of alpha,omega-dicyanooligothiophenes NC(C4H2S)(n)CN (n=3-6) [J].