Epitaxial growth of atomically flat spin dependent tunneling junctions

被引：1

作者：

Li, Y ^{[1
]}

Wang, SX ^{[1
]}

Mancoff, FB ^{[1
]}

Clemens, BM ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS | 1999年 / 570卷

关键词：

D O I：

10.1557/PROC-570-73

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin dependent tunneling junctions with epitaxially grown underlayers have been investigated to examine the possibility of achieving very flat and uniform barrier layers. Pt/Ni80Fe20/Fe50Mn50/Ni80Fe20 layers were deposited on sapphire (0001) substrates at different temperatures and monitored by in-situ reflection high energy electron diffraction (RHEED). The surface morphology has been found to depend strongly on the growth temperature. X-ray diffraction and magnetic hysteresis loop measurements were also performed to characterize the film structures.

引用

页码：73 / 78

页数：6

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