Elasto-optic anisotropy and polarization orientation of vertical-cavity surface-emitting semiconductor lasers

被引：103

作者：

vanDoorn, AKJ

vanExter, MP

Woerdman, JP

机构：

[1] Huygens Laboratory, Leiden University, 2300 RA Leiden

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.116924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a new technique to apply strain to a vertical-cavity surface-emitting semiconductor laser. This has allowed us to study the relation between strain and birefringence. We have found that the corresponding tensor is anisotropic, with a measured anisotropy 2p(44)/(p(11)-p(12)) = 4.7 +/- 0.6. This anisotropy explains the natural preference of the polarization for the [110]/[1(1) over bar0$] axes. (C) 1996 American Institute of Physics.

引用

收藏

页码：1041 / 1043

页数：3

相关论文

共 17 条

[1] POLARIZATION CHARACTERISTICS OF QUANTUM-WELL VERTICAL CAVITY SURFACE EMITTING LASERS [J].

CHANGHASNAIN, CJ ;

HARBISON, JP ;

FLOREZ, LT ;

STOFFEL, NG .

ELECTRONICS LETTERS, 1991, 27 (02) :163-165

[2] DYNAMIC, POLARIZATION, AND TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE EMITTING LASERS [J].

CHANGHASNAIN, CJ ;

HARBISON, JP ;

HASNAIN, G ;

VONLEHMEN, AC ;

FLOREZ, LT ;

STOFFEL, NG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1402-1409

[3] POLARIZATION PROPERTIES OF A VERTICAL-CAVITY SURFACE-EMITTING LASER USING A FRACTIONAL LAYER SUPERLATTICE GAIN MEDIUM [J].

CHAVEZPIRSON, A ;

ANDO, H ;

SAITO, H ;

KANBE, H .

APPLIED PHYSICS LETTERS, 1993, 62 (24) :3082-3084

[4] TEMPERATURE-DEPENDENCE OF GAIN-GUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER POLARIZATION [J].

CHOQUETTE, KD ;

RICHIE, DA ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2062-2064

[5] GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

LEIBENGUTH, RE .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :661-666

[6] CONTROL OF VERTICAL-CAVITY LASER POLARIZATION WITH ANISOTROPIC TRANSVERSE CAVITY GEOMETRIES [J].

CHOQUETTE, KD ;

LEIBENGUTH, RE .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :40-42

[7] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J].

COTTAM, RI ;

SAUNDERS, GA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13) :2105-2118

[8]

LANDAU LD, 1959, THEORY ELASTICITY, pCH1

[9] CONTROL OF LIGHT-OUTPUT POLARIZATION FOR SURFACE-EMITTING-LASER TYPE DEVICE BY STRAINED ACTIVE LAYER GROWN ON MISORIENTED SUBSTRATE [J].

NUMAI, T ;

KURIHARA, K ;

KUHN, K ;

KOSAKA, H ;

OGURA, I ;

KAJITA, M ;

SAITO, H ;

KASAHARA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (04) :636-642

[10] NEAR-RESONANCE ACOUSTOOPTICAL INTERACTIONS IN GAAS AND INP [J].

RENOSI, P ;

SAPRIEL, J .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2794-2796