Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses

被引：12

作者：

Brevet, A. ^{[1
]}

Peterle, P. M. ^{[1
]}

Imhoff, L. ^{[1
]}

de Lucas, M. C. Marco ^{[1
]}

Bourgeois, S. ^{[1
]}

机构：

[1] Univ Bourgogne, CNRS, UMR 5613, LRRS, F-21078 Dijon, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Electron spectroscopy for chemical analysis; Metalorganic chemical vapor deposition; Titanium dioxide;

D O I：

10.1016/j.jcrysgro.2004.11.081

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS) were performed to understand the initial stages of TiO2 thin-film MOCVD growth. Deposits on Si (1 0 0), a few nanometres thick, were obtained at a fixed temperature of 650 degrees C and for two different pressures, 2.9 and 0.05 mbar, using titanium tetraisopropoxide (TTIP) as precursor. Pressure lowering led to a higher deposit growth rate. Reduction of titanium with respect to stoichiometric titanium dioxide and oxidation of the wet-cleaned silicon substrate are observed from decomposition of the Ti 2p and Si 2p peaks. The formation of a TiSixOy mixed oxide is also pointed out and confirmed by the presence of a characteristic component in the O 1 s peak. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：E1263 / E1268

页数：6

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