Valence-band structure of group-IV semiconductors by means of local increments

被引:45
作者
Grafenstein, J
Stroll, H
Fulde, P
机构
[1] UNIV STUTTGART,INST THEORET CHEM,D-70550 STUTTGART,GERMANY
[2] MAX PLANCK INST PHYS KOMPLEXER SYST DRESDEN,D-01187 DRESDEN,GERMANY
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 20期
关键词
D O I
10.1103/PhysRevB.55.13588
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a method to determine the correlated valence-band structure of covalent semiconductors that uses information from quantum-chemical ab initio calculations on appropriate molecules. In distinction from previous cluster simulations, we consider a set of comparably small molecules rather than a large cluster, which allows us to use extended one-particle basis sets. We then extract local matrix elements from these calculations and use them to set up an incremental expansion for the bulk band structure. The question how to extend our method to the determination of the conduction-band structure and the band gap is discussed.
引用
收藏
页码:13588 / 13597
页数:10
相关论文
共 39 条
  • [1] AB-INITIO ENERGY-ADJUSTED PSEUDOPOTENTIALS FOR ELEMENTS OF GROUPS 13-17
    BERGNER, A
    DOLG, M
    KUCHLE, W
    STOLL, H
    PREUSS, H
    [J]. MOLECULAR PHYSICS, 1993, 80 (06) : 1431 - 1441
  • [2] EXCHANGE AND CORRELATION-EFFECTS ON THE QUASI-PARTICLE BAND-STRUCTURE OF SEMICONDUCTORS
    BORRMANN, W
    FULDE, P
    [J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9569 - 9579
  • [3] CAVE RJ, 1988, J CHEM PHYS, V89, P798
  • [4] CORRELATION-EFFECTS IN IONIC-CRYSTALS - THE COHESIVE ENERGY OF MGO
    DOLL, K
    DOLG, M
    FULDE, P
    STOLL, H
    [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4842 - 4848
  • [5] DOVESI R, 1988, HARTREE FOCK AB INIT, V48
  • [6] DOVESI R, 1992, COMPUTER CODE PISA
  • [8] ESCHRIG H, 1988, OPTIMIZED LCAO METHO, P73
  • [9] CANONICAL CONFIGURATIONAL INTERACTION PROCEDURE
    FOSTER, JM
    BOYS, SF
    [J]. REVIEWS OF MODERN PHYSICS, 1960, 32 (02) : 300 - 302
  • [10] FULDE P, UNPUB