Origin of the Flat-Band Voltage (Vfb) Roll-Off Phenomenon in Metal/High-k Gate Stacks

被引：10

作者：

Bersuker, G. ^{[1
]}

Park, C. S. ^{[1
]}

Wen, H. C. ^{[1
]}

Choi, K. ^{[1
]}

Sharia, O. ^{[2
]}

Demkov, A. ^{[2
]}

机构：

[1] SEMATECH, 2706 Montopolis Dr, Austin, TX 78741 USA

[2] Univ Texas Austin, Austin, TX 78712 USA

来源：

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2008年

关键词：

D O I：

10.1109/ESSDERC.2008.4681717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off-phenomenon as caused by the metal electrode/high-k dielectric-induced generation of positively charged oxygen vacancies in the interfacial SO) layer in the high-k dielectric stack. The model is consistent with the observed roll-off dependency on the electrode and substrate type, high-k dielectric composition and thickness, temperature, etc., and its predictions were experimentally verified.

引用

页码：134 / +

页数：2

共 15 条

[1]

AKIYAMA K, 2007, VLSI

[2] The effect of interfacial layer properties on the performance of Hf-based gate stack devices [J].