Surface leakage currents in SiNx′ passivated AlGaN/GaN HFETs

被引：104

作者：

Tan, WS ^{[1
]}

Uren, MJ ^{[1
]}

Houston, PA ^{[1
]}

Green, RT ^{[1
]}

Balmer, RS ^{[1
]}

Martin, T ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期

关键词：

gallium nitride; heterostructure field-effect transistors (HFETs); SiNx passivation; leakage currents; gate lag; current slump;

D O I：

10.1109/LED.2005.860383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiNx. always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiNx. recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.

引用

页码：1 / 3

页数：3

共 21 条

[1] 10-W/mm AlGaN-GaNHFET with a field modulating plate [J].

Ando, Y ;

Okamoto, Y ;

Miyamoto, H ;

Nakayama, T ;

Inoue, T ;

Kuzuhara, M .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :289-291

[2]

Ansell BJ, 2001, PHYS STATUS SOLIDI A, V188, P279, DOI 10.1002/1521-396X(200111)188:1<279::AID-PSSA279>3.0.CO

[3]

2-Y

[4] Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Sano, Y .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :613-615

[5] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[6] Electrical effects of SiNx deposition on GaN MESFETs [J].

Boudart, B ;

Gaquière, C ;

Guhel, Y ;

de Jaeger, JC ;

Poisson, MA .

ELECTRONICS LETTERS, 2001, 37 (08) :527-528

[7]

Dietrich R, 1999, PHYS STATUS SOLIDI A, V176, P209, DOI 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO

[8]

2-Q

[9] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

[10] Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors [J].

Hasegawa, H ;

Inagaki, T ;

Ootomo, S ;

Hashizume, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1844-1855

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