Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition

被引：20

作者：

Hu, GD ^{[1
]}

Xu, JB

Wilson, IH

Cheung, WY

Ke, N

Wong, SP

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, NT, Peoples R China

[2] Chinese Univ Hong Kong, Mat Sci & Technol Res Ctr, Shatin, NT, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 degrees C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 degrees C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed. (c) 1999 American Institute of Physics.

引用

页码：3711 / 3713

页数：3

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