A stacked capacitor with an MOCVD-(Ba,Sr)TiO3 film and a RuO2/Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond

被引：31

作者：

Yamaguchi, H

Iizuka, T

Koga, H

Takemura, K

Sone, S

Yabuta, H

Yamamichi, S

Lesaicherre, PY

Suzuki, M

Kojima, Y

Nakajima, K

Kasai, N

Sakuma, T

Kato, Y

Miyasaka, Y

Yoshida, M

Nishimoto, S

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A stacked high-e(r) capacitor is fabricated using a 550 degrees C-process-tolerant RuO2/Ru storage node on a TiN-capped plug and an ECR plasma MOCVD (Ba,Sr)TiO3 (BST) thin film with small SiO2 equivalent thickness (t(eq)) of 0.40 nm. The contact resistance (Rc) of a 0.15 mu m diameter (phi) contact is as low as 50 k Ohm. With this capacitor technology, a cell capacitance (Cs) of 25 fF is achieved in projected areas of 0.065 mu m(2) for 4 Gbit DRAMs and 0.031 mu m(2) for 16 Gbit DRAMs with 0.25 mu m- and 0.37 mu m-high storage nodes.

引用

页码：675 / 678

页数：4