Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition

被引：299

作者：

Sacepe, B. ^{[1
]}

Chapelier, C. ^{[1
]}

Baturina, T. I. ^{[2
]}

Vinokur, V. M. ^{[3
]}

Baklanov, M. R. ^{[4
]}

Sanquer, M. ^{[1
]}

机构：

[1] SPSMS LaTEQS, INAC, CEA, F-38054 Grenoble, France

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[4] IMEC, B-3001 Louvain, Belgium

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 15期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.157006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap Delta in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature T-c towards zero, enhancement of spatial fluctuations in Delta, and growth of the Delta/T-c ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

引用

页数：4

共 34 条

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[2]

ALTSHULER BL, 1983, ZH EKSP TEOR FIZ+, V84, P2280

[3] Quantum-critical region of the disorder-driven superconductor-insulator transition [J].