Semiconductor silicon: The extraordinary made ordinary

被引：3

作者：

Leamy, HJ ^{[1
]}

Wernick, JH ^{[1
]}

机构：

[1] UNIV N CAROLINA,WILLIAM STATES LEE COLL ENGN,CHARLOTTE,NC 28223

来源：

MRS BULLETIN | 1997年 / 22卷 / 05期

关键词：

D O I：

10.1557/S0883769400033200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 55

页数：9

共 39 条

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1948, 74 (02) :230-231

[2] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[3] A NEW SILICON P-N JUNCTION PHOTOCELL FOR CONVERTING SOLAR RADIATION INTO ELECTRICAL POWER [J].

CHAPIN, DM ;

FULLER, CS ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :676-677

[4]

CZOCHRALSKI J, 1917, Z PHYS CHEM-STOCH VE, V92, P219

[5]

Gibbs J.W., 1878, Trans. Connecticut Acad. Arts Sci., V16, P343

[6]

Gibbs J.W., 1876, Am.J. Sci, V3, P108, DOI DOI 10.2475/AJS.S3-16.96.441

[7]

Grondahl LO, 1927, T AIEE, V46, P357

[8] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 88 (01) :139-139

[9]

HOERNI JA, 1960, PROF GROUP EL DEV M

[10]

*INT U CONS POL SO, 1972, HIST DEM EC SOC DAT

← 1 2 3 4 →