Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells

被引：6

作者：

Shen, WZ

Chang, Y

Shen, SC

Tang, WG

Zhao, Y

Li, AZ

机构：

[1] SHANGHAI INST TECH PHYS, NATL LAB INFRARED PHYS, SHANGHAI 200083, PEOPLES R CHINA

[2] SHANGHAI INST MET, DEPT FUNCT MAT INFORMAT, SHANGHAI 200050, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.361072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As0.02Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton-phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. (C) 1996 American Institute of Physics.

引用

页码：2139 / 2141

页数：3

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