Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

被引:54
作者
Brennan, Thomas P. [1 ]
Trejo, Orlando [2 ]
Roelofs, Katherine E. [1 ,3 ]
Xu, John [2 ]
Prinz, Fritz B. [2 ,3 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
PHOTOVOLTAIC PERFORMANCE; CHARGE RECOMBINATION; DYE; DEPOSITION; ELECTROLYTE; CONVERSION; GROWTH; CARBON;
D O I
10.1039/c3ta10903h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes.
引用
收藏
页码:7566 / 7571
页数:6
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