Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

被引：54

作者：

Brennan, Thomas P. ^{[1
]}

Trejo, Orlando ^{[2
]}

Roelofs, Katherine E. ^{[1
,3
]}

Xu, John ^{[2
]}

Prinz, Fritz B. ^{[2
,3
]}

Bent, Stacey F. ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2013年 / 1卷 / 26期

关键词：

PHOTOVOLTAIC PERFORMANCE; CHARGE RECOMBINATION; DYE; DEPOSITION; ELECTROLYTE; CONVERSION; GROWTH; CARBON;

D O I：

10.1039/c3ta10903h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes.

引用

页码：7566 / 7571

页数：6

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