A high-current and high-temperature 6H-SiC thyristor

被引：48

作者：

Xie, K ^{[1
]}

Zhao, JH ^{[1
]}

Flemish, JR ^{[1
]}

Burke, T ^{[1
]}

Buchwald, WR ^{[1
]}

Lorenzo, G ^{[1
]}

Singh, H ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT & COMP ENGN,PISCATAWAY,NJ 08855

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 03期

关键词：

D O I：

10.1109/55.485194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 6H-SiC thyristor has been fabricated and characterized, A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm(2) have been demonstrated, The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300 degrees C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities.

引用

页码：142 / 144

页数：3

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