Three-dimensional numerical model for thermal analysis in x-ray irradiated photoresists

被引:15
作者
Dai, W [1 ]
Nassar, R [1 ]
Warrington, RO [1 ]
Shen, B [1 ]
机构
[1] LOUISIANA TECH UNIV, INST MICROMFG, COLL ENGN & SCI, RUSTON, LA 71272 USA
关键词
D O I
10.1080/10407789708914054
中图分类号
O414.1 [热力学];
学科分类号
摘要
Three-dimensional X-my irradiated resist has been modeled numerically, based on the Douglas alternating direction implicit (ADI) scheme and the parallel ''divide and conquer'' technique, in order to analyze the temperature distribution and the potential temperature rise. This numerical procedure is simple and efficient and can be generalized to the multilayer case, since it converts three-dimensional computations into a sequence of one-dimensional computations and easily overcomes the unknown at the interface between layers. Furthermore, the computational procedure is a domain decomposition algorithm. Numerical results were obtained with regard to the temperature distribution and maximum temperature rise attained in the resist.
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页码:585 / 595
页数:11
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