Design strategies for commercial solar cells using the buried contact technology

被引:9
作者
Honsberg, CB [1 ]
Cotter, JE [1 ]
McIntosh, KR [1 ]
Pritchard, SC [1 ]
Richards, BS [1 ]
Wenham, SR [1 ]
机构
[1] Univ New S Wales, Sydney, NSW 2052, Australia
关键词
silicon solar cells; minority carrier lifetime; commercial processing sequences;
D O I
10.1109/16.791986
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The efficiency of commercial solar cells depends not only on the design and technology used to make the solar cell, but just as importantly on the minority carrier lifetime in the silicon wafer material. This paper presents a design strategy based on matching the efficiency potential of the silicon material to that of the silicon substrate in order to minimize the $/W cost of a solar cell. The flexibility of the buried contact technology allows this design strategy to be fully utilized and a range of buried contact solar cell structures can be developed, each suited to a particular type of commercial silicon substrate. The paper demonstrates that simplified buried contact solar cells are best suited to multicrystalline silicon material. Generation I buried contact solar cells are optimally matched to conventional Czochralski (CZ) substrates, and double-sided buried contact (DS BC) structures will allow the thinner, higher lifetime wafers to reach their full efficiency potential.
引用
收藏
页码:1984 / 1992
页数:9
相关论文
共 46 条
[1]  
[Anonymous], P 25 IEEE PHOT SPEC
[2]  
Barnett A. M., 1994, Progress in Photovoltaics: Research and Applications, V2, P163, DOI 10.1002/pip.4670020211
[3]  
BASORE PA, 1996, P 25 IEEE PHOT SPEC, P377
[4]  
BRUTON T, 1993, 1 EUR CRYST SIL WORK, P108
[5]  
Bruton T.M., 1997, P 14 EUR PHOT SOL EN, P11
[6]  
BRUTON TM, 1993, P 23 IEEE PHOT SPEC, P1250
[7]  
CAO J, 1997, P 26 IEEE PVSC IEEE, P1077
[8]  
COTTER JE, 1998, P 2 WORLD C PHOT EN, P1551
[9]   High efficiency double sided buried contact silicon solar cells [J].
Ebong, AU ;
Lee, SH ;
Honsberg, C ;
Wenham, SR .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4A) :2077-2080
[10]  
FUJUI K, 1992, 4 SUNSH WORKSH CRYST, P25