AlGaN/GaN HBTs using regrown emitter

被引：26

作者：

Limb, JB ^{[1
]}

McCarthy, L ^{[1
]}

Kozodoy, P ^{[1
]}

Xing, H ^{[1
]}

Ibbetson, J ^{[1
]}

Smorchkova, Y ^{[1
]}

DenBaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 19期

关键词：

D O I：

10.1049/el:19991129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HBTs using regrown emitter AlGaN/GaN HBTs have been realised using the regrown emitter method. The device structure consists of an n-GaN collector, p-GaN base, and selectively grown AlGaN emitter. The HBTs were grown using metal organic chemical vapour deposition on sapphire substrate. The emitter was grown selectively on a pn junction diode after it was patterned with SiN. A common emitter curve showing low-leakage has been obtained.

引用

页码：1671 / 1673

页数：3

共 5 条

[1]

HAN J, 1998, APPL PHYS LETT, V74

[2]

MCCARTHY LS, 1998, 25 INT S COMP SEM OC

[3] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS [J].

NAKAMURA, S ;

IWASA, N ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A) :1258-1266

[4]

SHEPPARD ST, 1998, 56 ANN DEV RES C CHA

[5] High Al-content AlGaN/GaN MODFET's for ultrahigh performance [J].

Wu, YF ;

Keller, BP ;

Fini, P ;

Keller, S ;

Jenkins, TJ ;

Kehias, LT ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) :50-53

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