3-D Integration of RF Circuits Using Si Micromachining

被引：18

作者：

Katehi, Linda P. B. ^{[1
]}

Harvey, James F. ^{[2
]}

Herrick, Katherine J. ^{[3
]}

机构：

[1] Univ Michigan, Ann Arbor, MI 48109 USA

[2] US Army Res Off, Res Triangle Pk, NC USA

[3] Raytheon RF Components, Andover, MA USA

来源：

IEEE MICROWAVE MAGAZINE | 2001年 / 2卷 / 01期

关键词：

Micromachined silicon integrated circuits;

D O I：

10.1109/6668.918260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micromachined silicon integrated circuits can be used for providing an overarching circuit integration technology that can reduce the size, weight and cost of microwave and millimeter wave components. The packaging issues that are a prerequisite for the three-dimensional integration and component development and that can be used for three-dimensional integration were discussed. The three-dimensional vertical integration can not only provide higher density circuits but can reach levels of performance not possible in a planar geometry.

引用

页码：30 / 39

页数：10

共 29 条

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[3]

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