Very large magnetoimpedance (MI) in FeNi/Au multilayer film systems

被引:30
作者
de Cos, D.
Fry, N.
Orue, I.
Panina, L. V.
Garcia-Arribas, A.
Barandiaran, J. M.
机构
[1] Univ Basque Country, Dept Elect & Elect, E-48080 Bilbao, Spain
[2] Univ Plymouth, Sch Comp Commun & Elect, Plymouth PL4 8AA, Devon, England
关键词
magnetoimpedance; multilayers; magnetic anisotropy; magnetic sensors;
D O I
10.1016/j.sna.2005.09.060
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the magnetoimpedance (MI) effect in miniature NiFe/Au/NiFe multilayer film systems with layer thickness of 0.5 mu m produced by RF sputtering. The magnetic films have a well-established transverse anisotropy which was achieved by imposing a large magnetic field during the deposition and further annealing. The influence of insulating Al2O3 layers between the inner conductor and the magnetic layers on MI was also considered. The use of insulation is proving not to improve the MI behavior in thin film systems. The basic three layer film with in-plane size of 50 mu m x 5000 mu m shows the impedance change of more than 150% with the maximal sensitivity of 30%/Oe in the frequency range of 200-500 MHz. We believe this is the highest sensitivity reported for such miniature film systems. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:256 / 259
页数:4
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