Infrared focal plane array incorporating silicon IC process compatible bolometer

A 128 x 128 element bolometer infrared image sensor using thin film titanium is proposed, The device is a monolithically integrated structure,vith a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals, By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise, It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low.