In-plane uniaxial magnetic anisotropy of cobalt-doped Y3Fe5O12 epitaxial films

被引：7

作者：

Dale, D ^{[1
]}

Hu, G ^{[1
]}

Balbarin, V ^{[1
]}

Suzuki, Y ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 20期

关键词：

D O I：

10.1063/1.124053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown magnetically harder single-crystalline thin films of Y3Fe5O12 doped with Co2+ on (110)-oriented Ga3Gd5O12 substrates. Ge4+ and Ce4+ have been substituted to compensate for the charge differential between Co2+ and Fe3+. These garnet films, prepared using pulsed-laser deposition, exhibit excellent crystallinity as determined from x-ray diffraction and Rutherford backscattering spectroscopy. The addition of Co2+ in Y3Fe5O12 films enhances the in-plane uniaxial anisotropy over an order of magnitude, depending on composition. (C) 1999 American Institute of Physics. [S0003-6951(99)04920-7].

引用

页码：3026 / 3028

页数：3

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