Nonlinear optic polymer core - conductive polymer clad optoelectronic device

被引:15
作者
Grote, JG [1 ]
Drummond, JP [1 ]
机构
[1] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
来源
OPTOELETRONIC INTEGRATED CIRCUITS AND PACKAGING III | 1999年 / 3631卷
关键词
nonlinear optic polymer; optoelectronic; electrooptic; modulator; mach Zehnder;
D O I
10.1117/12.348299
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A scheme for a five volt V pi nonlinear optical (NLO) polymer optoelectronic (OE) device is presented with the potential to realize an interaction length that is about an order of magnitude shorter than conventional five volt V pi NLO polymer OE devices. It utilizes available NLO polymer materials for the core layer and a conductive polymer material for the cladding layers. Since the cladding layer material is more conductive than the core material, most of the applied poling and modulation voltages is dropped across the core layer, rendering a more efficient device. Using an NLO polymer material with electrooptic (EO) coefficients of say 22 pm/V, it is feasible to demonstrate < 2 mm OE devices operating at TTL voltage levels. These small device sizes could lead to use within electronic multichip modules (MCM's). In addition, since the majority of the poling voltage is dropped across the core layer, less voltage is required so that in-situ poling becomes possible.
引用
收藏
页码:86 / 95
页数:4
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