Molybdenum Diffusion in CuInSe2 Thin Films

被引：1

作者：

Dzhafarov, Tayyar ^{[1
,3
]}

Sadigov, Magomed ^{[1
,3
]}

Cingi, Emel ^{[1
]}

Bacaksiz, Emin ^{[2
]}

Caliskan, Murat ^{[1
]}

机构：

[1] Yildiz Tekn Univ, Dept Phys, TR-80270 Istanbul, Turkey

[2] Karadeniz Tech Univ, Dept Phys, TR-61080 Trabzon, Turkey

[3] Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

CuInSe2; films; Mo diffusion; electrical conductivity;

D O I：

10.7567/JJAPS.39S1.194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum diffusion in CuInSe2 (CIS) films was investigated in the temperature range 240-520 C using the energy-dispersive X-ray (EDX) and resistivity techniques. CuInSe2 thin films were deposited by single-source evaporation on glass and molybdenum-covered glass substrates. The temperature dependence of Mo diffusion coefficient is described by equation D=1.3x10-8exp(-0.53/kT). It is shown that the diffusion doping of p-type CIS by molybdenum is accompanied by the significant decrease of resistivity. The observed results of the diffusion and electrical measurements are attributed to migration of Mo in the polycrystalline CIS films by means of both along intergrain surfaces and into grains.

引用

页码：194 / 195

页数：2

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