Wide-band gap oxide alloy: BeZnO

被引：194

作者：

Ryu, YR

Lee, TS

Lubguban, JA

Corman, AB

White, HW

Leem, JH

Han, MS

Park, YS

Youn, CJ

Kim, WJ

机构：

[1] MOXtron Inc, Columbia, MO 65203 USA

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[3] Moxtronix, Kwangju 500460, South Korea

[4] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[5] Jeonbuk Natl Univ, SPRC, Jeonju 561756, South Korea

[6] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 05期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2168040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys. (c) 2006 American Institute of Physics.

引用

页码：1 / 2

页数：2

共 7 条

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[2]

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