Improvement of Thermoelectric Performance of CoSb3-xTex Skutterudite Compounds by Additional Substitution of IVB-Group Elements for Sb

被引：140

作者：

Liu, Wei-Shu ^{[1
,2
]}

Zhang, Bo-Ping ^{[2
]}

Zhao, Li-Dong ^{[1
,2
]}

Li, Jin-Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 24期

关键词：

D O I：

10.1021/cm802367f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An enhanced ZT value as high as 1.1 at similar to 550 degrees C has been achieved in n-type nanostructured CoSb3-xTex skutterudite compounds through additional substitution of IVB-group elements (Si, Ge, Sn, Pb) for Sb. Particularly, Sri was found to be the most effective element to enhance the ZT value by extending the solubility limit of Te in CoSb3-xTex, which decreases thermal conductivity more significantly than electrical conductivity. The reduced thermal conductivity is confirmed by the Raman scattering measurement of CoSb2.86M0.02Te0.12 (M = Si, Ge, Sn, Pb), which shows that Ge and Sn enter into the Sb-site of CoSb3 and generate significant changes in the vibration modes, whereas Si and Pb are not likely to get into the lattice of CoSb3. Furthermore, nanostructure with fine grains and "nanodots" also contributes to the reduction of thermal conductivity.

引用

页码：7526 / 7531

页数：6

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