Preparation of Fe-Ga thin films by DC magnetron sputtering

被引：6

作者：

Takeuchi, M ^{[1
]}

Matsumura, Y

Uchida, H

机构：

[1] Tokai Univ, Grad Sch Engn, Course Appl Sci, Hiratsuka, Kanagawa 2591292, Japan

[2] Tokai Univ, Sch Engn, Dept Appl Sci, Hiratsuka, Kanagawa 2591292, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 2004年 / 68卷 / 02期

关键词：

magnetostriction; gallium; iron; magnetron sputtering; thin film; < 110 > dominant crystalline orientation; columnar grains; iron-gallium alloy;

D O I：

10.2320/jinstmet.68.142

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The magnetostrictive properties of Fe-Ga (Ga: 8 at%-21 at%) alloy films prepared by DC magnetron sputtering system were investigated. Base pressure was less than 1.0 X 10(-4) Pa and Fe-Ga films were deposited onto Single crystal Si(100) and polyimide substrate at room temperature with DC 200 W in an Ar atmosphere of 2.5 x 10(-1) Pa. The lattice parameter of Fe-Ga films with a bcc structure increased with the increasing Ga concentration. The Fe-Ga films showed columnar grains with a crystalline orientation for <110> perpendicular to the film plane. The magnetostriction of Fe-Ga films increased with the increasing Ga concentration. Fe-21 at%Ga film showed a maximum magnetostriction of 180 ppm at an applied magnetic field of 1200 kA/m.

引用

页码：142 / 144

页数：3

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