Axial-junction nanowires of Ag2Te-Ag as a memory element

被引:27
作者
Batabyal, Sudip K. [1 ]
Vittal, Jagadese J. [1 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
关键词
D O I
10.1021/cm801388w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silver telluride nanowires incorporating silver were prepared by green chemical method in aqueous solution. First, Ag2TeO3 was prepared from aqueous solutions of sodium tellurite (Na2TeO3) and silver nitrate (AgNO3). At room temperature in basic solution, alpha-D-glucose reduces Ag2TeO3 to generate silver nanocrystals, whereas solvothermal reaction of Ag2TeO3 with (X-D-glucose at 165 degrees C generates Te, Ag, or Ag2Te-Ag axial hetrojunction nanowires depending upon the pH of the reaction mixture. These heterojunction nanowires, which exhibit electrical bistability at low voltage, can be used as data storage devices.
引用
收藏
页码:5845 / 5850
页数:6
相关论文
共 23 条
[1]   INFRARED SPECTRAL INVESTIGATION OF TELLURITES [J].
ARNAUDOV, M ;
DIMITROV, V ;
DIMITRIEV, Y ;
MARKOVA, L .
MATERIALS RESEARCH BULLETIN, 1982, 17 (09) :1121-1129
[2]   One-dimensional steeplechase for electrons realized [J].
Björk, MT ;
Ohlsson, BJ ;
Sass, T ;
Persson, AI ;
Thelander, C ;
Magnusson, MH ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
NANO LETTERS, 2002, 2 (02) :87-89
[3]   A bit per particle: Electrostatic assembly of CdSe quantum dots as memory elements [J].
Das, Bikas C. ;
Batabyal, Sudip K. ;
Pal, Amlan J. .
ADVANCED MATERIALS, 2007, 19 (23) :4172-+
[4]   THERMAL HYSTERESIS DURING PHASE-TRANSITION IN AG2TE THIN-FILMS - THICKNESS EFFECT [J].
DAS, VD ;
KARUNAKARAN, D .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1822-1825
[5]   Nanocrystal nonvolatile memory devices [J].
De Blauwe, J .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) :72-77
[6]   Electronic structure of Ag2Te, band calculation and photoelectron spectroscopy [J].
Kashida, S ;
Watanabe, N ;
Hasegawa, T ;
Iida, H ;
Mori, M .
SOLID STATE IONICS, 2002, 148 (1-2) :193-201
[7]   DIFFUSION PATH AND HAVENS RATIO OF MOBILE IONS IN ALPHA-AG2TE [J].
KOBAYASHI, M ;
ISHIKAWA, K ;
TACHIBANA, F ;
OKAZAKI, H .
PHYSICAL REVIEW B, 1988, 38 (05) :3050-3055
[8]   Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties [J].
Lee, Jang-Sik ;
Cho, Jinhan ;
Lee, Chiyoung ;
Kim, Inpyo ;
Park, Jeongju ;
Kim, Yong-Mu ;
Shin, Hyunjung ;
Lee, Jaegab ;
Caruso, Frank .
NATURE NANOTECHNOLOGY, 2007, 2 (12) :790-795
[9]   NANOMATERIALS - A MEMBRANE-BASED SYNTHETIC APPROACH [J].
MARTIN, CR .
SCIENCE, 1994, 266 (5193) :1961-1966
[10]   Colloidal nanocrystal heterostructures with linear and branched topology [J].
Milliron, DJ ;
Hughes, SM ;
Cui, Y ;
Manna, L ;
Li, JB ;
Wang, LW ;
Alivisatos, AP .
NATURE, 2004, 430 (6996) :190-195