Lattice parameters of gallium nitride

被引：362

作者：

Leszczynski, M

Teisseyre, H

Suski, T

Grzegory, I

Bockowski, M

Jun, J

Porowski, S

Pakula, K

Baranowski, JM

Foxon, CT

Cheng, TS

机构：

[1] UNIV WARSAW,INST EXPTL PHYS,WARSAW,POLAND

[2] UNIV NOTTINGHAM,NOTTINGHAM NG7 2RD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects. (C) 1996 American Institute of Physics.

引用

收藏

页码：73 / 75

页数：3

相关论文

共 25 条

[1] TEMPERATURE-DEPENDENCE OF THE LATTICE-CONSTANT IN DOPED AND NONSTOICHIOMETRIC GAAS, GAAS1-CHIP-CHI, AND GAP [J].

BAKMISIUK, J ;

BRUHL, HG ;

PASZKOWICZ, W ;

PIETSCH, U .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02) :451-457

[2]

BAKMISIUK J, IN PRESS J APPL PHYS

[3] PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[4] LATTICE STRAIN FROM DX CENTERS AND PERSISTENT PHOTOCARRIERS IN SN-DOPED AND SI-DOPED GA1-XALXAS [J].

CARGILL, GS ;

SEGMULLER, A ;

KUECH, TF ;

THEIS, TN .

PHYSICAL REVIEW B, 1992, 46 (16) :10078-10085

[5] RELAXATION PROCESS OF THE THERMAL STRAIN IN THE GAN/ALPHA-AL2O3 HETEROSTRUCTURE AND DETERMINATION OF THE INTRINSIC LATTICE-CONSTANTS OF GAN FREE FROM THE STRAIN [J].

DETCHPROHM, T ;

HIRAMATSU, K ;

ITOH, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1454-L1456

[6] ABSOLUTE LATTICE-PARAMETER MEASUREMENT [J].

FEWSTER, PF ;

ANDREW, NL .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1995, 28 :451-458

[7] PHOTOSTRICTION EFFECT IN GERMANIUM [J].

FIGIELSKI, T .

PHYSICA STATUS SOLIDI, 1961, 1 (04) :306-316

[8]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[9] RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY [J].

HIRAMATSU, K ;

DETCHPROHM, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1528-1533

[10] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517