Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching

被引：399

作者：

Lunt, Richard R. ^{[1
,2
,3
,4
]}

Giebink, Noel C. ^{[1
,2
,3
,4
]}

Belak, Anna A. ^{[2
,3
,4
]}

Benziger, Jay B. ^{[1
]}

Forrest, Stephen R. ^{[2
,3
,4
]}

机构：

[1] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Dept Chem Engn, Princeton, NJ 08544 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

关键词：

aggregation; crystal orientation; diffusion; excitons; organic semiconductors; photoluminescence; radiation quenching; semiconductor thin films; ENERGY-TRANSFER; QUANTUM EFFICIENCY; SINGLET; GROWTH; DIINDENOPERYLENE; HETEROJUNCTION; LUMINESCENCE; DIANHYDRIDE; ABSORPTION; EXCITATION;

D O I：

10.1063/1.3079797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate spectrally resolved photoluminescence quenching as a means to determine the exciton diffusion length of several archetype organic semiconductors used in thin film devices. We show that aggregation and crystal orientation influence the anisotropy of the diffusion length for vacuum-deposited polycrystalline films. The measurement of the singlet diffusion lengths is found to be in agreement with diffusion by Forster transfer, whereas triplet diffusion occurs primarily via Dexter transfer.

引用

页数：7

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