Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium

被引:33
作者
Paszkowicz, W
Adamczyk, J
Krukowski, S
Leszczynski, M
Porowski, S
Sokolowski, JA
Michalec, M
Lasocha, W
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland
[3] Jagiellonian Univ, Fac Chem, PL-30060 Krakow, Poland
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1999年 / 79卷 / 05期
关键词
D O I
10.1080/01418619908210352
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
InN crystals of size up to 50 mu m were synthesized using a microwave plasma source of nitrogen. The InN powder of wurtzite-type structure obtained was characterized by X-ray diffraction. Lattice parameters were measured in the temperature range 100-673 K. The average room-temperature lattice parameters of three of the samples studied at 296(+/-3) K are a = 3.5374(1) Angstrom, c = 5.7027(5) Angstrom. The calculated density is 6.923 +/- 0.003 g cm(-3). The thermal expansion coefficients in the temperature range investigated are a(a) = 3.6(2) x 10(-6) K-1 and a(c) = 2.6(3) x 10(-6) K-1.
引用
收藏
页码:1145 / 1154
页数:10
相关论文
共 34 条
[1]  
ANGUS JC, 1997, MATER RES SOC S P, V484, P149
[2]   Second-order pretransitional effects in the high pressure phase transition of indium nitride [J].
Besson, JM ;
Bellaiche, L ;
Kunc, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01) :469-474
[3]  
ELLIOTT RP, 1965, CONSTITUTION BINAR S
[4]   Novel single source precursors for MOCVD of AlN, GaN and InN [J].
Fischer, RA ;
Miehr, A ;
Ambacher, O ;
Metzger, T ;
Born, E .
JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :139-143
[5]  
GORYUNOVA NA, 1965, CHEM DIAMOND TYPE SE
[6]   CRYSTAL-GROWTH OF III-N COMPOUNDS UNDER HIGH-NITROGEN PRESSURE [J].
GRZEGORY, I ;
JUN, J ;
KRUKOWSKI, S ;
BOCKOWSKI, M ;
POROWSKI, S .
PHYSICA B, 1993, 185 (1-4) :99-102
[7]  
GRZEGORY I, 1993, JPN J APPL PHYS S, V32, P343
[8]  
GRZEGORY I, 1994, AIP C P, V309, P565, DOI 10.1063/1.46099
[9]   Examinations on the nitrides of cadmium, gallium, indium and germanium - Metal amides and metal nitrides VIII Announcement [J].
Hahn, H ;
Juza, R .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1940, 244 (02) :111-124
[10]   Comparison of GaN, InN and AIN powders for susceptor-based rapid annealing of group III nitride materials [J].
Hong, J ;
Lee, JW ;
MacKenzie, JD ;
Donovan, SM ;
Abernathy, CR ;
Pearton, SJ ;
Zolper, JC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) :1310-1318