Advances in amorphous silicon uncooled IR systems

被引:26
作者
Brady, J [1 ]
Schimert, T [1 ]
Ratcliff, D [1 ]
Gooch, R [1 ]
Ritchey, B [1 ]
McCardel, P [1 ]
Rachels, K [1 ]
Ropson, S [1 ]
Wand, M [1 ]
Weinstein, M [1 ]
Wynn, J [1 ]
机构
[1] Raytheon Syst Co, Dallas, TX 75266 USA
来源
INFRARED TECHNOLOGY AND APPLICATIONS XXV | 1999年 / 3698卷
关键词
micro infrared camera; amorphous silicon; microbolometer;
D O I
10.1117/12.354517
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new class of uncooled infrared systems has been developed based on advances in both amorphous silicon detectors and signal/system processing techniques. Not only are these devices uncooled but they operate over a wide system ambient temperature range without the use of TEC's or choppers. The devices are DC biased and provide radiometric information from each pixel without the use of a calibrated source. The current imaging systems are medium (120x160) to low (15 x 31) resolution. They were designed with a very disciplined "concept-to-cost" technique in which cost, power, size, weight and performance were traded off in the stated order. The result has been a new generation of "ambient temperature" thermal imaging systems and radiometers.
引用
收藏
页码:161 / 167
页数:7
相关论文
共 1 条
[1]  
SCHIMERT T, 1997, P 1996 INT SPEC C OP, P67