Dielectric relaxations and dielectric response in multiferroic BiFeO3 ceramics

被引:158
作者
Hunpratub, Sitchai [1 ]
Thongbai, Prasit [1 ]
Yamwong, Teerapon [2 ]
Yimnirun, Rattikorn [3 ]
Maensiri, Santi [1 ]
机构
[1] Khon Kaen Univ, Dept Phys, Khon Kaen 40002, Thailand
[2] Natl Met & Mat Technol Ctr MTEC, Pathum Thani 12120, Thailand
[3] Chiang Mai Univ, Fac Sci, Dept Phys, Chiang Mai 50200, Thailand
关键词
bismuth compounds; dielectric function; dielectric relaxation; ferroelectric ceramics; grain boundaries; hopping conduction; multiferroics; permittivity; powder technology; CACU3TI4O12; POLARIZATION;
D O I
10.1063/1.3078825
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-phase multiferroic BiFeO3 ceramics were fabricated using pure precipitation-prepared BiFeO3 powder. Dielectric response of BiFeO3 ceramics was investigated over a wide range of temperature and frequency. Our results reveal that the BiFeO3 ceramic sintered at 700 degrees C exhibited high dielectric permittivity, and three dielectric relaxations were observed. A Debye-type dielectric relaxation at low temperatures (-50 to 20 degrees C) is attributed to the carrier hopping process between Fe2+ and Fe3+. The other two dielectric relaxations at the temperature ranges 30-130 degrees C and 140-200 degrees C could be due to the grain boundary effect and the defect ordering and/or the conductivity, respectively.
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页数:3
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