Preparation and degradation of highly conducting polyaniline doped with picric acid

被引:35
作者
Ahmed, SM [1 ]
机构
[1] Assiut Univ, Fac Sci, Dept Chem, Assiut 71516, Egypt
关键词
polyaniline; picric acid; conductivity; electroactivity; spectroanalytical; degradation;
D O I
10.1016/S0014-3057(01)00293-2
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Preparation and characterization of highly conducting polyaniline (PANI) doped with picric acid (PA) was proved with the help of various techniques. Elemental analysis, FTIR and XPS spectroscopic Measurements confirm that the PA operates as a protonating agent to induce the internal conversion of PANI emeraldine base (PANI-EB) to the PANI emeraldine salt (PANI-ES) with the doping level 50%. Molecular modeling calculations (MM+,) showed that the optimum geometric structure of 2PA:1PANI (energy 38,231388 kcal/mol, and gradient 0.065246). The observed higher conductivity (sigma similar to150 S/cm) of PA-doped PANI film prepared at molar ratio 2PA:1PANI (EB) is attributed to the change in the molecular conformation from coil to expanded coil-like. PA-doped PANI is thermally unstable above similar to135 degreesC and the thermal processing with other insulating matrix is not profitable but the solution casting is highly promising. PA-doped PANI with acrylonitrile-butadiene-styrene copolymer has been fabricated and showed the threshold value similar to4 wt % of a conducting material. The reduced PA-doped PANI reveals an ability to store electrical energy of about 110.43 Wh/kg in a condensed lightweight form, The immediate decoloration of the dark green lambda(max) similar to815 nm) PANI after addition of 5.5 mug/ml KMnO4 in strong acid medium (pH 1.0, H2SO4. 40 DMF) is due to the highest oxidized form of PANI. Increasing the absorbance with increases ill the KMnO4 concentration (mug/ml) at similar to385 nm has been Successfully applied to the determination of trace amount (0,55 mug/ml) of Mn(VII) in a synthetic solution. (C) 2002 Elsevier Science Ltd, All rights reserved.
引用
收藏
页码:1151 / 1158
页数:8
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