Temperature dependence of magnetotransport in extraordinary magnetoresistance devices

被引：13

作者：

Boone, T. D. ^{[1
]}

Folks, L.

Katine, J. A.

Maat, S.

Marinero, E.

Nicoletti, S.

Field, M.

Sullivan, G. J.

Ikhlassi, A.

Brar, B.

Gurney, B. A.

机构：

[1] San Jose Res Ctr, Hitachi Global Storage Technol, San Jose, CA 95120 USA

[2] Rockwell Int Corp, Thousand Oaks, CA 91360 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2006年 / 42卷 / 10期

关键词：

electromagnetic devices; extraordinary magnetoresistance; magnetic sensors; semiconductor devices; semiconductor; heterojunctions;

D O I：

10.1109/TMAG.2006.879149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 mu A. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path.

引用

页码：3270 / 3272

页数：3

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